Technical Specifications
| Parameter Name | Parameter Value |
|---|---|
| Product Model | 3BHE019719R0101 / 3BHB006485R0001 |
| Semiconductor Designation | 5SGY3545L0014 (also referenced as 5SHY3545L0014) |
| Gate Board Designation | GVC736BE101 |
| Manufacturer | ABB (ABB Semiconductors, now part of Hitachi Energy) |
| Product Type | IGCT frequency converter assembly (power module + gate driver) |
| Device Type | Asymmetric press-pack IGCT with integrated antiparallel free-wheeling diode |
| Repetitive Peak Off-State Voltage VDRM | 4500 V (4.5 kV) |
| Average On-State Current IT(AV) | 350 A |
| Repetitive Turn-Off Current ITGQM | 450 A |
| 10 ms Surge Current IFSM | 7 kA |
| Typical On-State Voltage VTM | 1.85 V |
| Maximum Junction Temperature Tjmax | 140 °C |
| Thermal Resistance Rth(j-c) | 0.07 K/W |
| Substrate Isolation | 2500 VAC / 1 min |
| Switching Frequency | 500 Hz to 1.5 kHz typical |
| Gate Supply | 24 V DC (backplane-supplied) |
| Gate Drive Levels | −20 V / +20 V typical |
| Trigger Input | Fiber-optic (PWM / control signal) |
| Isolation (Gate Board to Power) | Galvanic, fiber-optic ≥ 15 kV |
| Gate Protection | Desaturation detection, UVLO, Miller clamp |
| Cooling | Press-pack, double-sided; water-cooled or forced-air |
| Encapsulation | Ceramic press-pack housing |
| Physical Dimensions | Approx. 155 × 120 × 40 mm |
| Net Weight | Approx. 0.55 kg |
| Mounting | Power stack, bolted press-pack assembly |
| Operating Temperature | −40 °C to +125 °C (junction); 0 °C to +60 °C (gate board) |
| Certifications | CE, UL, ISO 9001:2015 |
Main Features and Advantages
Press-pack construction for fail-safe operation
The ABB 3BHB006485R0001 uses a press-pack ceramic housing rather than conventional soldered or wire-bonded packaging. Both faces of the silicon make direct metal-to-metal contact with the heat sink, giving the device far better thermal transfer than a welded module and allowing double-sided cooling. More importantly, the press-pack fails short-circuit rather than open-circuit: when a fault occurs, the device continues to conduct so that the upstream protection can clear it safely. In a megawatt-class drive this behavior prevents uncontrolled energy release and makes fault diagnosis materially simpler.
Integrated free-wheeling diode eliminates external commutation hardware
Each ABB 3BHB006485R0001 integrates the IGCT die with its antiparallel high-voltage free-wheeling diode in a single package. The power unit therefore requires no separate external commutation diode, reducing component count, wiring points, and potential failure points. The result is a more compact power stack and a lower parts count for the maintenance team to manage—an advantage that becomes significant when a converter contains dozens of these devices.
Low conduction losses under sustained full load
With a typical on-state voltage drop of 1.85 V and a thermal resistance of 0.07 K/W, the ABB 3BHB006485R0001 keeps both steady-state heating and switching losses low. For a plant running a 400 kW load over 8000 hours per year, the difference between this device and an older, less efficient switching technology can amount to several megawatt-hours of saved energy annually. Low losses also mean lower cooling demand, which reduces both operating cost and the thermal stress that ultimately limits device life.
Fiber-optic gate drive with active protection
The ABB 3BHE019719R0101 gate-driver board receives its commands over fiber-optic links, providing complete galvanic separation between the high-voltage power side and the low-voltage control domain. The board shapes the gate waveform and monitors the IGCT’s on-state voltage and dv/dt, incorporating desaturation detection that responds within microseconds to a short-circuit condition, an undervoltage lockout that prevents switching until the gate supply is sufficient, and a Miller clamp that suppresses spurious turn-on caused by high dv/dt transients. These functions are what allow the ABB 3BHE019719R0101 / 3BHB006485R0001 to switch cleanly and safely in a medium-voltage environment.
