Description
Technical Specifications
| Parameter Name | Parameter Value |
|---|---|
| Product Model | 5SHY4045L0004 |
| Order / Inventory Code | 3BHB021400R0002 |
| Manufacturer | ABB (Switzerland); power-semiconductor line continued by Hitachi Energy |
| Product Type | Integrated Gate-Commutated Thyristor (IGCT) Power Module |
| Product Series | ABB HiPak 5SHY high-power press-pack family |
| Device Structure | Asymmetrical IGCT with integrated reverse-conducting freewheeling diode; multi-cathode unit |
| Repetitive Peak Off-State / Reverse Voltage (VDRM / VRRM) | 4500 V |
| Rated Turn-Off Current (ITGQM) | 4000 A (VD = 2800 V, Tj = 125 °C) |
| On-State Voltage (VTM) | ≤ 1.8 V typical @ 4000 A (≤ 2.8 V max per batch) |
| Surge On-State Current (ITSM) | ≥ 60 kA for one power-frequency half-cycle; up to 85 kA non-repetitive |
| Turn-On Delay Time (td(on)) | ≈ 3.5 µs (VD = 2800 V, IT = 4000 A) |
| Turn-Off Delay / Circulating-Current Turn-Off Time | ≈ 7 µs / reducible to < 1 µs with hard-drive gate concept |
| Turn-Off Energy (Eoff) | ≈ 22 J/pulse; turn-on energy ≈ 1.5 J/pulse |
| Switching Frequency | 500 Hz typical; up to 1 kHz (hard-switching); kHz-class capability in resonant/soft-switching concepts |
| Gate Trigger (IGT / VGT) | ≈ 150–300 mA / ≈ 1.5–3.0 V |
| Gate Interface | Fiber-optic, 24 V DC gate-unit supply; integrated gate drive (Gen B) |
| Critical Current Rise Rate (diT/dt) | ≥ 1000 A/µs |
| Critical Voltage Rise Rate (dvD/dt) | ≥ 1000 V/µs |
| Thermal Resistance, Junction-to-Case (Rth(j-c)) | ≈ 0.0055 K/W (single side); ≈ 0.008 K/W (module basis, cooling-dependent) |
| Junction Temperature Range | –40 °C to +125 °C continuous; 175 °C absolute maximum (SPT++) |
| Isolation Voltage | 5000 V AC, 1-minute withstand |
| Cooling Method | Double-sided forced liquid (water) cooling, primary; forced air limited to ≈ 30 % rated load |
| Package Style | Press-pack, double-sided cooling, fully isolated ceramic housing |
| Module Dimensions (approx.) | 190 mm × 130 mm × 65 mm (module); power-unit assembly ≈ 350 × 250 × 200 mm |
| Weight | ≈ 2.9 kg (module); ≈ 6 kg dressed; ≈ 10–18 kg in power-unit assembly |
| Mounting Method | Bolted press-pack with calibrated clamping force; recommended torque ≈ 80 N·m; re-torque after 24 h thermal cycling |
| Protection Features | Overcurrent, overvoltage, overtemperature, dv/dt monitoring, internal-arcing detection, gate-block on fault |
| Compliance | IEC 60747-6 / IEC 60747-9, IEC 61803; CE, UL, RoHS; SIL3-capable at system level |
| Compatible Gate Driver | 3BHE039203R0101 (GVC736CE101); 3BHE019719R0101 (GVC736BE101); 3BHB018162R0001 / R0002 (TGU) |
| System Compatibility | ABB ACS6000, ACS1000 medium-voltage drives; HVDC valves; FACTS / SVC / STATCOM; wind and traction converters |
Main Features and Advantages
IGCT technology with SPT++ chips — the GTO’s strength without the GTO’s overhead:
The defining advantage of the ABB 5SHY4045L0004 is architectural. A conventional GTO thyristor can block high voltage and carry high current, but it cannot be turned off quickly unless a bulky, lossy snubber circuit absorbs the energy stored in stray inductance. The IGCT changes that equation: the integrated gate unit forces the entire cathode current into the gate within 1 µs, driving the current gain to below unity and achieving a hard, controlled turn-off. The result is a device that needs little or no snubber, suffers roughly 40 % less turn-off loss than a GTO, and tolerates higher dv/dt. Coupled with SPT++ chip geometry, which enlarges the active area while keeping the chip thin, the ABB 5SHY4045L0004 reaches 18 MW-class power-handling capability in a single switch and does so with a VTM near 1.8 V — meaning less heat, smaller heat exchangers, and higher drive efficiency.
Double-sided press-pack construction for thermal and mechanical endurance:
Where a plastic-pack IGBT module relies on solder and bond wires that fatigue under thermal cycling, the ABB 5SHY4045L0004 uses a ceramic pressure-contact package with no solder joints and no leads. Clamping force is applied uniformly across the silicon, giving an exceptionally low Rth(j-c) and allowing both faces to shed heat. This symmetry is why the module supports a 175 °C junction-temperature ceiling and a mechanical life in excess of one million operations. It is also why the module is unusually forgiving of the short-circuit and transient-current stresses found in rolling-mill stands, crushers, and arc-furnace electrodes — stresses that routinely crack conventional modules.
Integrated, fiber-commanded gate unit:
The gate is not an afterthought. The ABB 5SHY4045L0004 is driven by a GVC736-series gate unit (GVC736BE101 or GVC736CE101, selected to match the drive configuration), which receives timing commands over a fiber-optic link, generates the 20 V-class gate waveform, limits di/dt, supervises the 24 V gate supply, and reports alarm status back to the drive controller. This separation of power and control by fiber makes the valve stack inherently immune to ground-loop and EMI-induced misfiring. It also enables online health monitoring: a slowly rising gate charge or a drifting VTM can be trended long before a failure. Important field rule: the gate-unit generation must match the module revision — mixing Gen A and Gen B gate circuits produces erratic turn-off and must be avoided.
